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2011年10月刊
市场 Market
中国的LED产能何时成为世界第一？
When Will China Become #1 in LED Capacity?
技术 Technology
晶圆键合：选择合适的工艺来制造大功率垂直LED
Wafer bonding: selecting the right process for making powerful, vertical LEDs 全面检查技术奠定 LED 制造业高成品率的基础
Comprehensive inspection techniques can underpin high-yield LED manufacturing 等离子刻蚀：制造高亮度LED的关键技术
Plasma etching: a key technology for manufacturing HBLEDs 揭开高电子迁移率晶体管HEMT性能退化之谜
Unravelling the mysteries of HEMT degradation 双极型SiC晶体管提高了电功率变换的效率
Bipolar SiC transistors enhance electrical power conversion
科技之光 Research Review
理论学者揭示是俄歇机制引起LED发光效率的降低
LED droop: Theorists uncover the Auger mechanisms 纳米图形化的蓝宝石衬底可提高绿光LED的输出功率
Nanopatterned sapphire boosts green emission 氮极HEMT正在赶超传统技术
N-polar HEMT catches up conventional cousins 用化学腐蚀来改善薄膜LED的性能
Chemical etching improves thin-film LEDs 采用自立式 a-平面衬底来提高HFET的性能
Freestanding a-plane substrate boosts HFET performance III-V族表面氧化层的有序化
Putting order into III-V surface oxides 如何在硅衬底上生长无缺陷的GaAs纳米线
How to grow defect-free GaAs nanowires on silicon 在硅上生长的InGaN长波长LED器件问世
First long wavelength InGaN LED grown on silicon 揭示更多石墨烯的秘密
Graphene gives up more of its secrets Imec采用填孔方法开发新SiGe
Imec develops new SiGe via filling methods |
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